The terms are not directly comparable. SLC, MLC, and TLC are terms used to describe the amount of bits per cell. 3D NAND means that the cells are stacked creating a much higher density than the traditional 2D NAND memory.3d nand flash memory
3D NAND is the latest generation of flash memory (also known as flash storage). Flash memory is used in enterprise server storage (data storage for large businesses) and networking technology, as well as in a wide range of consumer devices, including USB flash drives, smartphones, digital cameras, tablets, and laptops.Industrial micro SD
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3D NAND has better performance and reliability compared to planar NAND.
MLC stands for multi-level cell, and it refers to flash memory in which two bits of data can be stored per cell. With 3D MLC NAND flash, each stacked cell can still store two bits of data, so the increased storage with 3D MLC can be dramatic when compared to planar MLC.
In simple terms, 3D NAND is stacking memory (or silicon) chips on each other. Some manufacturers call this V (for vertical) NAND.Solid-State Drive
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This allows more cells to fit in the same area, reducing the cost per bit and improving the reliability of the memory. Each layer of cells is connected by vertical channels that enable data transfer and access. Depending on the number of layers, 3D NAND can offer up to 256 times more capacity than 2D NAND.
3D DRAM refers to the architectural storing of bits in the vertical direction, similar to 3D NAND. However, DRAM is almost 1000x faster than NAND and achieves this speed by using a high mobility silicon substrate as the starting material to form the channel.
Main Memory (RAM) is slightly slower than Cache Memory, but still provides fast access to data and instructions. Hard Disk is the slowest type of memory, as it uses mechanical components to access and transfer data.
